t4 - lds - 0241, rev . 1 (112023) ?2011 microsemi corporation page 1 of 4 1n5610 thru 1n5613 available on commercial versions voidless hermetically sealed unidirectional transient voltage suppressors qualified per mil -prf- 19500/434 qualified levels : jan, jantx, and jant xv description this series of industry recognized voidless hermetically sealed u nidirectional transient voltage suppressor (tvs) designs is military qualified and are ideal for hig h - reliability applications where a failure cannot be tolerated. they provide a working peak standof f voltage selection from 30.5 to 175 v olts with 1500 watt ratings. they are very robust in hard - glass construction and also use an internal metallurgical bond identified as category 1 for high reliability applications. thes e devices are also available in a surface mount melf package configuration as a special order. microsemi also offers numerous other tvs products to meet higher and lower peak pulse power and voltage ratings in both t hrough - hole and surface - mount packages. g package also available by special order : melf surface mount important: for the latest information, visit our website http://www.microsemi.com . features ? high surge current and peak pulse power provides transient voltage protection for sensitive circuits . ? triple - layer passivation. ? internal category 1 metallurgical bonds. ? voidless hermetically sealed glass package. ? jan , jan tx , and jantxv military qualifications available per mil - prf - 19500/434. ? furth er options for screening in accordance with mil - prf - 19500 for jans equivalent level by using a sp prefix. ? rohs compliant versions available (commercial grade only) . applications / benefits ? military and other high reliability transient protection. ? extremely robust construction. ? working peak standoff voltage (v wm ) from 30.5 to 175 v. ? available as 1500 watt peak pulse power (p pp ). ? esd and eft protection per iec61000 -4- 2 and iec61000 -4- 4 respectively. ? secondary lightning protection per select levels in iec61000 -4- 5. ? flexible axial - leaded mounting terminals. ? non - sensitive to esd per mil - s td - 750 m ethod 1020. ? inherently radiation hard as described in microsemi micronot e 050 . m axim um ratings @ t a = 25 o c unless otherwise noted. msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: ww w.microsemi.com parameters/test conditions symbol value unit junction and storage temperature t j and t stg - 55 to +175 o c peak pulse power @ t p = 1.0 ms p pp 1500 w rated forward surge current @ t p = 8.33 ms i fsm 150 a (pk) impulse repetition rate (duty factor) i pp 0.01 % steady - state power (1) ( figure 4 ) p d 3.0 w solder temperature @ 10 s t sp 260 o c notes : 1. derate at 20 mw/ o c above t a = +25 o c . steady - state power ratings with reference to ambient are for p c boards where thermal resistance from mounting point to ambient is sufficient ly controlled where t j( ma x) is not exceeded. downloaded from: http:///
t4 - lds - 0241, rev . 1 (112023) ?2011 microsemi corporation page 2 of 4 1n5610 thru 1n5613 mechanical and packaging ? case: hermetically sealed voidless hard glass with t ungsten slugs. ? terminations: axial - leads are t in /l ead (sn/pb) over copper. rohs compliant matte -t in available for commercial only. ? marking: b ody painted and part number . ? polarity: cathode band. ? tape & reel option: standard per eia - 296. consult factory for quantities. ? weight: 1270 m illi g rams . ? se e p ackage d imensions on last page. part nomenclature jan 1n5610 (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level sp = reference jans blank = commercial rohs compliance e3 = rohs c ompliant ( available on commercial grade only) blank = non - rohs c ompliant jedec type number see electrical characteristics table symbols & definitions symbol definition i (br) breakdown current: the current used for measuring breakdown voltage v (br) . i d maximum standoff current: the maximum current that will flow at the specified voltage and temperature. i pp peak pulse current: the peak current during the impulse. p pp peak pulse power: the peak power dissipation resulting from the peak impulse current i pp . t sp temperature solder pad: the maximum solder temperature that can be safely applied to the terminal. v(br) temperature coefficient of minimum breakdown voltage: the minimum voltage the device will exhibit at a specified current te mperature. v ( br ) minimum breakdown voltage: the minimum voltage the device will exhibit at a specified current . v c maximum clamping voltage at specified i pp (peak pulse current) at the specified pulse condi tions. v wm working peak voltage: the maximum peak voltage that can be applied over the operating temperature range. this is also referred to as standoff voltage. electrical characteristics type minimum break down voltage v (br) @ 1.0 ma breakdown current maximum dc current t a = +25 o c i (br) working peak reverse voltage v wm max standoff current i d @ v wm maximum clamping voltage v c @ 10/1000 s maximum peak pulse current i pp @8/20 s @10/1000 s maximum temp. coef. of v (br) v (br ) volts ma v (pk) a v (pk) a (pk) a (pk) % / o c 1n5610 33.0 75.0 30.5 5 47.6 193 32 .0 .093 1n5611 43.7 53.0 40.3 5 63.5 136 24 .0 .094 1n5612 54.0 43.0 49.0 5 78.5 116 19 .0 .096 1n5613 191 12.5 175 5 265 33 5.7 .100 downloaded from: http:///
t4 - lds - 0241, rev . 1 (112023) ?2011 microsemi corporation page 3 of 4 1n5610 thru 1n5613 graphs p ulse ti me (tp) time (t) in microseconds fig. 1 C non - repetitive peak pulse power rating curve fig. 2 pulse wave form for exponential note: peak power defined as peak voltage times peak current . surge for 10/1000 s t C time C s t C temperature C o c figure 3 figure 4 8/20 s current impulse waveform derating curve test waveform parameters: t r = 8 sec t p = 20 sec peak pulse power (ppp), current (ipp), and dc power in percent of 25 o c rating i pp C peak pulse current - % i pp p eak pulse power p pp in kw pulse time duration (tp) is defined as that point where i p decays to 50% of peak value (i pp ). peak value i pp pulse current (i p ) in percent of i pp downloaded from: http:///
t4 - lds - 0241, rev . 1 (112023) ?2011 microsemi corporation page 4 of 4 1n5610 thru 1n5613 package dimensions l tr d imensions not es i nches m illime te rs min max min max bd . 150 . 185 3. 81 4. 70 3 bl . 160 . 375 4. 06 9. 53 3 ld . 037 . 042 0. 94 1. 07 ll . 900 1. 300 22 . 86 33 . 02 lu . 050 1. 27 4 sc hematic sy m bo l not es: 1 . d imension s a re in inches . 2 . m illime te rs a re gi ven fo r gene ral in for ma t io n onl y. 3 . p ackag e con t ou r op t iona l wit hi n bd an d leng th b l. 4 . w it hi n t hi s z on e lea d diame te r ma y va ry to allo w fo r lea d f inishe s an d i rr egula rit ie s ot he r t ha n hea t slugs . 5 . in acco r danc e wi th as m e y 14 .5m, diame te rs a re equi v alen t to x sy mbolog y. downloaded from: http:///
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